smd type ic 1 mosfet smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK2415 features low on-resistance r ds(on)1 =0.10 max. (@ v gs =10v,i d =4.0a) r ds(on)2 =0.15 max. (@ v gs =4v,i d =4.0a) low ciss c iss = 570 pf typ. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 8.0 a i dp * 32 a power dissipation p d 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 1.0 1.6 2.0 v forward transfer admittance y fs v ds =10v,i d =4a 5.0 8.4 s v gs =10v,i d =4a 0.07 0.10 v gs =4v,i d =4a 0.10 0.15 input capacitance c iss 570 pf output capacitance c oss 290 pf reverse transfer capacitance c rss 75 pf turn-on delay time t on 5ns rise time t r 60 ns turn-off delay time t off 75 ns fall time tf 40 ns v ds =10v,v gs =0,f=1mhz drain to source on-state resistance r ds(on) i d =4a,v gs(on) =10v,r g =10 ,v dd =30v product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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